Nenad Novkovski

Professor of Condensed Matter Physics
Institute of Physics, Faculty of Natural Sciences and Mathematics
University St. Cyril and Methodius, Skopje, Macedonia
E-mail: nenad@iunona.pmf.ukim.edu.mk
Page: http://www.pmf.ukim.edu.mk/fizika/personal/novkovski/novkovski_ang.htm

Fields of interest:

  • Methods of fabrication, electrical characterization and determination of dielectric integrity of ultra thin insulating films on semiconductors for application in microelectronics
  • Optimization of technological parameters for fabrication of ultra-thin insulators for microelectronics
  • Physical mechanisms of the conductivity and dielectric breakdown of ultra-thin insulating films
  • Physical models of electrical conductivity of ultra-thin insulating films and stacked layers

 

Recent publications:

E. Atanassova, N. Novkovski, D. Spassov, A. Paskaleva, and A. Skeparovski,
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack,
Microelectronics Reliability 54, 381 (2014)

M. Delipetrev, N. Novkovski, and T. Delipetrov,
New geomagnetic measurements in the Republic of Macedonia,
Annals of Geophysics 56, R0327 (2013)

E. Atanassova, D. Spassov, N. Novkovski, and A. Paskaleva,
Constant current stress of lightly Al-doped Ta2O5,
Materials Science in Semiconductor Processing 15, 98 (2012)

L. Stojanovska-Georgievska, N. Novkovski, and E. Atanassova,
Charge trapping at Pt/high-k dielectric (Ta2O5) interface,
Physica B: Condensed Matter 406, 3348 (2011)

A. Skeparovski, N. Novkovski, E. Atanassova, A. Paskaleva, and V. K. Lazarov,
Effect of Al gate on the electrical behaviour of Al doped Ta2O5 stacks,
J. Phys. D: Appl. Phys. 44, 235103 (2011)

N. Novkovski and E. Atanassova,
Charge trapping during constant current stress in Hf-doped Ta2O5 _lms sputtered on nitrided Si,
Thin Solid Films 519, 2262 (2011)

E. Atanassova, N. Novkovski, A. Paskaleva, D. Spassov,
Constant current stress-induced leakage current in mixed HfO2 { Ta2O5 stacks,
Microelectron. Reliab. 50, 794 (2010)

D. Spassov, E. Atanassova, N. Novkovski,
Electrical behaviour of Ti-doped Ta2O5 on N2O and NH3 nitrided Si,
Semicond. Sci. Technol. 24, 075024 (2009)

N. Novkovski,
Analysis of the improvement of Al-Ta2O5/SiO2-Si structures reliability by Si substrate plasma nitridation in N2O,
Thin Solid Films 517, 4394 (2009)

A. Skeparovski1, N. Novkovski, E. Atanassova, D. Spassov and A. Paskaleva,
Temperature dependence of leakage currents in Ti doped Ta2O5 _lms on nitrided silicon,
J. Phys. D: Appl. Phys. 42, 095302 (2009)